专利

专利名称:SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/376,750
专利权人:清华大学
时间:2011-12-07
专利名称:SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/376,442
专利权人:清华大学
时间:2011-12-06
专利名称:SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/376,429
专利权人:清华大学
时间:2011-12-06
专利名称:STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/263,236
专利权人:清华大学
时间:2011-10-06
专利名称:STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/263,227
专利权人:清华大学
时间:2011-10-06
专利名称:STRAINED GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/263,222
专利权人:清华大学
时间:2011-10-06
专利名称:SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/202,411
专利权人:清华大学
时间:2011-08-19
专利名称:GE-ON-INSULATOR STRUCTURE AND METHOD FOR FORMING THE SAME
专利号:13/201,903
专利权人:清华大学
时间:2011-08-17
专利名称:Tunneling Field Effect Transistor and Method for Forming the Same
专利号:13/147,470
专利权人:清华大学
时间:2011-08-02
专利名称:Tunneling Device and Method for Forming the Same
专利号:13/147,465
专利权人:清华大学
时间:2011-08-02
专利名称:MOS Transistor Structure with in-situ Doped Source and Drain and Method for Forming the Same
专利号:13/132,768
专利权人:清华大学
时间:2011-06-03
专利名称:Low Schottky Barrier Semiconductor Structure and Method for Forming the Same
专利号:13/132,760
专利权人:清华大学
时间:2011-06-03
专利名称:Method for Forming Strained Layer with High Ge Content on Substrate and Semiconductor Structure
专利号:13/126,730
专利权人:清华大学
时间:2011-04-28
专利名称:Si-Ge-Si Semiconductor Structure Having Double Compositionally-Graded Hetero-Structures and Method for Forming the Same
专利号:13/126,722
专利权人:清华大学
时间:2011-04-28
专利名称:Semiconductor structure
专利号:13/120,122
专利权人:清华大学
时间:2011-07-12
上一页