专利
专利名称：FABRICATION METHOD FOR SURROUNDING GATE SILICON NANOWIRE TRANSISTOR WITH AIR AS SPACERS
专利号：11 2011 103 810.0
专利名称：FLASH MEMORY AND METHOD FOR FABRICATING THE SAME
专利号：11 2011 104 041.5
专利名称：RESISTIVE FIELD EFFECT TRANSISTOR HAVING AN ULTRA-STEEP SUBTHRESHOLD SLOPE AND METHOD FOR FABRICATING THE SAME
专利号：11 2011 103 660.4
专利名称："METHOD FOR FABRICATING INFET WITH SEPARATED DOUBLE GATES ON BULK SILICON
专利号：14/006,219
专利名称：METHOD FOR FABRICATING COMPLEMENTARY TUNNELING FIELD EFFECT TRANSISTOR BASED ON STANDARD CMOS IC PROCESS
专利号：13/884,095
专利名称：INTERFACE TREATMENT METHOD FOR GERMANIUM-BASED DEVICE
专利号：13/702,562
专利名称：METHOD FOR FABRICATING FINFET IN LARGE SCALE INTEGRATED CIRCUIT
专利号：13/877,763
专利名称：DIRECTIONAL COUPLER INTEGRATED BY CMOS PROCESS
专利号：13/641, 647
专利名称：METHOD FOR TESTING DENSITYAND LOCATION OF GATE DIELECTRIC LAYER TRAP OF SEMICONDUCTOR DEVICE
专利号：13/879,967
专利名称：GE-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME
专利号：13/580,971
专利名称：GERMANIUM-BASED NMOS DEVICE AND METHOD FOR FABRICATING THE SAME
专利号：13/519,857
专利名称：METHOD FOR FABRICATING ULTRA-FINE NANOWIRE
专利号：13/511,624
专利名称：METHOD FOR FABRICATING ULTRA-FINE NANOWIRE
专利号：13/543,704
专利名称：METHOD FOR PREDICTING RELIABLE LIFETIME OF SOI MOSFET DEVICE
专利号：13/504,433
专利名称：PROGRAMMABLE ARRAY OF SILICON NANOWIRE FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME
专利号：13/503,240
