专利
专利名称：HEAT DISSIPATION STRUCTURE OF CHIP
专利号：13/391,270
专利名称：FABRICATION METHOD OF VERTICAL SILICON NANOWIRE FIELD EFFECT TRANSISTOR
专利号：13/501,711
专利名称：METHOD FOR FABRICATING SILICON NANOWIRE FIELD EFFECT TRANSISTOR BASED ON WET ETCHING
专利号：13/511,123
专利名称：METHOD FOR OBTAINING DISTRIBUTION OF CHARGES ALONG CHANNEL IN MOS TRANSISTOR
专利号：13/499,275
专利名称：HEAT DISSIPATION STRUCTURE OF SOI FIELD EFFECT TRANSISTOR
专利号：13/582, 624
专利名称：FABRICATION METHOD OF GERMANIUM-BASED N-TYPE SCHOTTKY FIELD EFFECT TRANSISTOR
专利号：13/390,755
专利名称：MOS TRANSISTOR HAVING COMBINED-SOURCE STRUCTURE WITH LOW POWER CONSUMPTION AND METHOD FOR FABRICATING THE SAME
专利号：13/501,241
专利名称：METHOD FOR FABRICATING SURROUNDING-GATE SILICON NANOWIRE TRANSISTOR WITH AIR SIDEWALLS
专利号：13/384,215
专利名称：METHOD FOR FABRICATING FINE LINE
专利号：13/513,852
专利名称：FIELD EFFECT TRANSISTOR WITH A VERTICAL CHANNEL AND FABRICATION METHOD THEREOF
专利号：13/821,944
专利名称：METHOD FOR TESTING TRAP DENSITY OF GATE DIELECTRIC LAYER IN SEMICONDUCTOR DEVICE HAVING NO SUBSTRATE CONTACT
专利号：13/382,415
专利名称：METHOD FOR FABRICATING SEMICONDUCTOR NANO CIRCULAR RING
专利号：13/379,752
专利名称：HIGH VOLTAGE-RESISTANT LATERAL DOUBLE-DIFFUSED TRANSISTOR BASED ON NANOWIRE DEVICE
专利号：13/381,633
专利名称：A STRAINED CHANNEL FIELD EFFECT TRANSISTOR AND THE METHOD FOR FABRICATING THE SAME
专利号：13/255,443
专利名称：METHOD FOR MANUFACTURING TRANSISTOR
专利号：13/376834
